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Lesson | °ÀǸñÂ÷ | °Àǽð£ |
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Á¦ 1° | [ÇÙ½ÉÀÌ·Ð] Energy band¿Í Fermi level | 43ºÐ |
Á¦ 2° | [ÇÙ½ÉÀÌ·Ð] Extrinsic semiconductor | 29ºÐ |
Á¦ 3° | [ÇÙ½ÉÀÌ·Ð] Current in semiconductor Á¾·ù, º¯È, ±¸Çϱâ | 24ºÐ |
Á¦ 4° | [ÇÙ½ÉÀÌ·Ð] ½ÉÈ ÀÌ·Ð | 23ºÐ |
Á¦ 5° | [¼ÒÀÚ] p-n junction 1 : Depletion layer / Doping concentration¿¡ µû¸¥ º¯È | 23ºÐ |
Á¦ 6° | [¼ÒÀÚ] p-n junction 2 : ¿ÜºÎ Àü¾Ð¿¡ µû¸¥ p-n junctionÀÇ º¯È | 22ºÐ |
Á¦ 7° | [¼ÒÀÚ] p-n junction 3 : ¿ÜºÎ Àü¾Ð¿¡ µû¸¥ p-n junctionÀÇ º¯È (Àüü±¸°£) | 28ºÐ |
Á¦ 8° | [¼ÒÀÚ] MOSFET 1 : ±âº» ±¸Á¶ | 32ºÐ |
Á¦ 9° | [¼ÒÀÚ] MOSFET 2 : µ¿ÀÛ¿ø¸® | 26ºÐ |
Á¦ 10° | [¼ÒÀÚ] MOSFET 3 : ÃøÁ¤ | 29ºÐ |
Á¦ 11° | [¼ÒÀÚ] MOSFET 4 : Ư¼º ÀúÇÏ-1 | 24ºÐ |
Á¦ 12° | [¼ÒÀÚ] MOSFET 5 : Ư¼º ÀúÇÏ-2 | 31ºÐ |
Á¦ 13° | [¼ÒÀÚ] MOSCAP : Ideal / Real | 28ºÐ |
Á¦ 14° | [¼ÒÀÚ] Memory : Flash memory / RAM | 38ºÐ |
Á¦ 15° | [°øÁ¤] 8´ë °øÁ¤ °³¿ä ¹× Oxidation & CMP | 24ºÐ |
Á¦ 16° | [°øÁ¤] Photolithography °øÁ¤ÀÇ °³¿ä / Photo Mask / ¼ø¼ ¹× ¼¼ºÎ ³»¿ë | 31ºÐ |
Á¦ 17° | [°øÁ¤] Doping & Plasma : Doping °øÁ¤ / Plasma | 25ºÐ |
Á¦ 18° | [°øÁ¤] Etching °øÁ¤°³¿ä, ºÐ·ù, Etch stop | 25ºÐ |
Á¦ 19° | [°øÁ¤] Thin film Deposition °øÁ¤ °³¿ä, ºÐ·ù | 30ºÐ |
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